SK DDR3 主要的timing及部分feature介绍，total35 page Descr iption The H5TC4G43AFR-xxA, H5TC4G83AFR-xxA and H5TC4G63AFR-xxA are a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large
OPA2232 数据手册英文版 The OPA334 and OPA335 series of CMOS operational amplifiers use auto-zeroing techniques to simultaneously provide very low offset voltage (5µV max), and near-zero drift over time and temperature. These miniature, high-precision, low
The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These synchron
DDR3L (1.35V) SDRAM is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
南亚DDR3资料 NT5CB64M16GP-EK JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and S
FS4057单节4.2V/4.35V锂电池充电icpdf,线性锂电池充电管理芯片，这些器件内部集成有功率管，不需要外部的电流检测电阻和阻流二极管，只需要极少的外围元器件，并且符合USB总线技术规范，可以用USB口或交流适配器对单节锂离子或者锂-聚合物可充电电池充电。 一般输出电压4.2V，精度可达1%，为了激活深度放电的电池和减小功耗，在电池电压较低时采用小电流的预充电模式；用户可编程的持续恒流充电电流FANHAI
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