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  1. Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with th

  2. Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:1029120
    • 提供者:weixin_38743076