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  1. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

  2. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：1048576
    • 提供者：weixin_38589774