您好,欢迎光临本网站![请登录][注册会员]  

搜索资源列表

  1. 常用高频半导体三极管BJT(Bipolar Junction Transistor)介绍

  2. BJT的参数是用来表征管子性能优劣和适应范围的,这是选用BJT的依据。了解这些参数的意义,对于合理使用和充分利用BJT达到设计电路的经济性和可靠性是十分必要的。(原创文章) 本文对常用三极管进行了列表整理,但因工作量太大,没有做到尽善尽美。
  3. 所属分类:专业指导

    • 发布日期:2009-08-17
    • 文件大小:87040
    • 提供者:chenxiaogo123
  1. 模拟集成电路(老版 Bipolar讲的十分清楚)

  2. Bipolar讲的十分清楚 没有讲MOS,需MOS的勿下!!
  3. 所属分类:专业指导

    • 发布日期:2009-08-24
    • 文件大小:9437184
    • 提供者:zhangyunwu5555
  1. 模拟电路应用2--HIGH SPEED OP AMPS(Analog Devices提供)

  2. Modern system design increasingly makes use of high speed ICs as circuit building blocks. With bandwidths going up and up, demands are placed on the designer for faster and more power efficient circuits. The default high speed amplifier has changed
  3. 所属分类:专业指导

    • 发布日期:2009-09-11
    • 文件大小:582656
    • 提供者:markhwa
  1. 压力传感器mpx5010

  2. The MPX5010/MPXV5010G series piezoresistive transducers are state-ofthe- art monolithic silicon pressure sensors designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This tr
  3. 所属分类:专业指导

    • 发布日期:2009-11-09
    • 文件大小:455680
    • 提供者:x7340353
  1. cs5530 pdf

  2. The CS5530 is a highly integrated ΔΣ Analog-to-Digital Converter (ADC) which uses charge-balance techniques to achieve 24-bit performance. The ADC is optimized for measuring low-level unipolar or bipolar signals in weigh scale, process control, scie
  3. 所属分类:其它

    • 发布日期:2009-11-12
    • 文件大小:271360
    • 提供者:fangyanfen
  1. 实用模拟电路设计技术

  2. Early single-supply “zero-in, zero-out” amplifiers were designed on bipolar processes which optimized the performance of the NPN transistors. The PNP transistors were either lateral or substrate PNPs with much poorer performance than the NPNs. Fully
  3. 所属分类:Java

    • 发布日期:2009-11-15
    • 文件大小:3145728
    • 提供者:chang6160063
  1. ACDC脉宽调制开关电源控制芯片设计

  2. 随着科学技术的发展,通信、消费电子类产品等对开关电源需求迅猛增长,开关电源核心控制电路的集成化是开关电源的发展方向。集成脉宽调制模式控制芯片的开关电源具有频率特性好、线性度高、输出电压纹波较小等优点,已成为功率电子学研究领域的一大热点,并在通讯、计算机等领域获得了广泛应用。 本文基于双极工艺,利用Cadence EDA设计工具,在分析开关电源工作原理的基础上,设计了一种AC.DC脉宽调制开关电源控制芯片。论文详细分析了不同种类开关电 源控制芯片的实现方法,根据功能需要设计了开关电源控制芯片整体
  3. 所属分类:嵌入式

    • 发布日期:2009-11-18
    • 文件大小:1048576
    • 提供者:zq1987731
  1. 基于EDA技术的HDB3编码器的设计与实现

  2. HDB3码(High Density Bipolar Code of three codes,三阶高密度双极性码)是串行数据传输的一种重 要编码方式,也是数字通信系统中重要组成部分之一。 和最常用的NRZ码(Non—Return Zero,非归零码)相比,HDB3码具有很多优点。
  3. 所属分类:专业指导

    • 发布日期:2009-12-23
    • 文件大小:232448
    • 提供者:z476458209
  1. Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

  2. prl (BarbarosO¨ zyilmaz)的文章
  3. 所属分类:专业指导

    • 发布日期:2010-08-22
    • 文件大小:1005568
    • 提供者:sh1986ye
  1. Bipolar eigenspace separation transformation

  2. Bipolar eigenspace separation transformation
  3. 所属分类:专业指导

    • 发布日期:2011-11-25
    • 文件大小:427008
    • 提供者:jiashuai032
  1. bipolar process

  2. bipolar process introduction
  3. 所属分类:专业指导

    • 发布日期:2013-03-25
    • 文件大小:111616
    • 提供者:ailiandian
  1. bipolar集成电路设计

  2. 一本关于描述bipolar电路设计的书,非常有参考价值。
  3. 所属分类:硬件开发

    • 发布日期:2014-08-18
    • 文件大小:2097152
    • 提供者:keisini3366
  1. 绝缘栅双极型功率管(IGBT-Insulated Gate Bipolar Transistor)

  2.  IGBT(Insulated Gate Bipolar Transistor),绝缘栅双极型功率管,是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式电力半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。
  3. 所属分类:专业指导

    • 发布日期:2009-04-06
    • 文件大小:40960
    • 提供者:chming2004
  1. Novel composite bipolar plates in PEM fuel cells

  2. 质子交换膜燃料电池用新型双极板,王正,,To overcome some of the traditional material’s major disadvantages,a variety of composite bipolar plates have been developed. The compound structure bipolar plates consisting a m
  3. 所属分类:其它

    • 发布日期:2020-02-01
    • 文件大小:458752
    • 提供者:weixin_38538950
  1. High current gain 4H-SiC bipolar junction transistor

  2. High current gain 4H-SiC bipolar junction transistor
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:570368
    • 提供者:weixin_38693528
  1. Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

  2. Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:1009664
    • 提供者:weixin_38631773
  1. Write-Once-Read-Many-Timesand Bipolar Resistive Switching Characteristics of TiN/HfO2/PtDevices Dependent on the Electro

  2. Write-Once-Read-Many-Timesand Bipolar Resistive Switching Characteristics of TiN/HfO2/PtDevices Dependent on the Electroforming Polarity
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:461824
    • 提供者:weixin_38666753
  1. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechan

  2. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:1048576
    • 提供者:weixin_38516956
  1. The design of bipolar spin semiconductor based on zigzag–edge graphene nanoribbons

  2. The design of bipolar spin semiconductor based on zigzag–edge graphene nanoribbons
  3. 所属分类:其它

    • 发布日期:2021-02-06
    • 文件大小:3145728
    • 提供者:weixin_38625164
  1. Bipolar phototransistor in a vertical Au/graphene/MoS

  2. Bipolar phototransistors have higher optical responsivity than photodiodes and play an important role in the field of photoelectric conversion. Two-dimensional materials offer a good optical responsivity and have the potential advantages of heterogen
  3. 所属分类:其它

    • 发布日期:2021-01-26
    • 文件大小:1048576
    • 提供者:weixin_38625164
« 12 3 4 5 6 7 8 9 10 »