The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400℃ followed by co-evaporation of elemental Cu and Se at 55℃.We study the structural and electrical properties using XRD, XRF and
An in situ process monitor for the CuInxGa1?xSe2 (copper indium gallium selenide) (CIGS) coating system is a very important tool that produces repeatable, high-quality CIGS coatings. This letter provides an overview of the current state of applicatio
