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  1. Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Lig

  2. Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:854016
    • 提供者:weixin_38637998