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  1. Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal

  2. Pockel’s effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about 203 V, deduced by P
  3. 所属分类:其它

    • 发布日期:2021-02-07
    • 文件大小:391168
    • 提供者:weixin_38691055