Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaine

Highly conducting ZnO:Al (AZO) films are normally prepared through substrate heating and post-annealing in reducing atmosphere, which is deleterious to maintain the high transparency of films and the overall so-lar cell performance. Here we fabricate