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  1. Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

  2. In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi l
  3. 所属分类:其它

    • 发布日期:2021-02-23
    • 文件大小:538624
    • 提供者:weixin_38719643