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  1. High-speed modif ied uni-traveling-carrier photodiode with a new absorber design

  2. The Gaussian doping is used to optimize the performance of InP/InGaAs uni-traveling-carrier photodiode (UTC-PD) in this letter. The UTC-PD structure is modeled with drift-diffusion approach and the comparisons of the characteristics for four UTC-PDs
  3. 所属分类:其它

    • 发布日期:2021-02-09
    • 文件大小:936960
    • 提供者:weixin_38551070