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  1. Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy

  2. Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular.beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different.coverage rates of Ge nanostructures on GaSb are achieved and inves
  3. 所属分类:其它

    • 发布日期:2021-02-07
    • 文件大小:2097152
    • 提供者:weixin_38698863