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  1. Impact of carrier transport on the performance of QD lasers on silicon: a drift-diffusion approach

  2. The operation of quantum dot lasers epitaxially grown on silicon is investigated through a quantum-corrected Poisson-drift-diffusion model. This in-house developed simulation framework completes the traditional rate equation approach, which models th
  3. 所属分类:其它

    • 发布日期:2021-01-26
    • 文件大小:2097152
    • 提供者:weixin_38638292