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  1. Impact of native defects and impurities in m-HfO2 and -Si3N4 on charge trapping memory devices: A first principle hybrid

  2. Impact of native defects and impurities in m-HfO2 and -Si3N4 on charge trapping memory devices: A first principle hybrid functional study

  3. 所属分类：其它

    • 发布日期：2021-02-22
    • 文件大小：1048576
    • 提供者：weixin_38620839