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  1. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current o

  2. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：1048576
    • 提供者：weixin_38698927