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  1. In situ instant generation of an ultrabroadband near-infrared emission center in bismuth-doped borosilicate glasses via

  2. Bismuth (Bi)-doped photonic materials, which exhibit broadband near-infrared (NIR) luminescence (1000–1600 nm), are evolving into interesting gain media. However, the traditional methods have shown their limitations in enhancing Bi NIR emission, espe
  3. 所属分类:其它

    • 发布日期:2021-02-22
    • 文件大小:1048576
    • 提供者:weixin_38723105