Meet or Exceed the Requirements of ANSI TIA/EIA-644 Standard Operate With a Single 3.3-V Supply Designed for Signaling Rate of up to 400 Mbps Differential Input Thresholds ±100 mV Max Typical Propagation Delay Time of 2.1 ns Power Dissipat
内存 K4S161622.pdfK4S161622E CMOS SDRAM Rev 1.1 Jan '03 The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design
