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  1. Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

  2. Gallium nitride (GaN)-based light-emitting diodes (LEDs) are important for lighting and display applications. In this paper, we demonstrate green-emission (512 nm) InGaN quantum dot (QD) LEDs grown on a

  3. 所属分类：其它

    • 发布日期：2021-01-26
    • 文件大小：1039360
    • 提供者：weixin_38670420