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  1. Low temperature deposition of p-type nc-Si:H thin films for superstrate a-Si:H based p-i-n solar cells

  2. 低温沉积p型氢化纳米硅与非晶硅pin顶衬太阳电池，胡志华，Shi Qingnan，Boron doped nc-Si:H p-layers were deposited by PECVD technique at a low substrate temperature (~60 0C) with various hydrogen dilution ratio of 150, 100 and 50 respectively. Transmi

  3. 所属分类：其它

    • 发布日期：2020-03-14
    • 文件大小：429056
    • 提供者：weixin_38719564