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  1. Fundamentals of Guided-Wave Optoelectronic Devices

  2. Fundamentals of Guided-Wave Optoelectronic Devices
  3. 所属分类:其它

    • 发布日期:2010-04-05
    • 文件大小:2097152
    • 提供者:jasonfly1984
  1. Period-one characteristic in an optoelectronic delayed feedback semiconductor laser and its application in sensing

  2. Nonlinear dynamics in an optoelectronic delayed feedback semiconductor laser and its application in sensing are studied. We analyze the theories of stability and period of the laser. A route to quasi-periodic bifurcation or a stochastic state from st
  3. 所属分类:其它

    • 发布日期:2021-03-03
    • 文件大小:745472
    • 提供者:weixin_38589314
  1. A cost-effective 100-Gb/s transmitter with low-speed optoelectronic devices and high spectral efficiency

  2. A 100-Gb/s high-speed optical transmitter is proposed and experimentally demonstrated. Based on frequency-quadrupling technique, two sub-channels with a fixed 50-GHz spacing are obtained from one laser source. Using return-to-zero differential quadra
  3. 所属分类:其它

    • 发布日期:2021-02-26
    • 文件大小:1048576
    • 提供者:weixin_38741950
  1. Compact optoelectronic oscillator based on a Fabry–Perot resonant electro-optic modulator

  2. A novel compact optoelectronic oscillator (OEO) employing a Fabry–Perot (FP) resonant electro-optic (EO) modulator is proposed and experimentally demonstrated. The resonant modulator is used as the optical storage element as well as the mode selectio
  3. 所属分类:其它

    • 发布日期:2021-02-23
    • 文件大小:903168
    • 提供者:weixin_38545959
  1. Wideband tunable optoelectronic oscillator based on a single-bandpass microwave photonic filter and a recirculating dela

  2. A wideband tunable optoelectronic oscillator (OEO) based on a tunable single-bandpass microwave photonic filter (MPF) and a recirculating delay line is proposed and experimentally demonstrated. The MPF is formed by cascading a finite impulse response
  3. 所属分类:其它

    • 发布日期:2021-02-22
    • 文件大小:905216
    • 提供者:weixin_38699757
  1. High-performance fiber-integrated multifunctional graphene-optoelectronic device with photoelectric detection and optic-

  2. In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage for the phase modulator. Here,
  3. 所属分类:其它

    • 发布日期:2021-02-22
    • 文件大小:1048576
    • 提供者:weixin_38546459
  1. Integrated optoelectronic chip pair for transmitting and receiving optical signals simultaneously

  2. An integrated optoelectronic chip pair, which can transmit and receive optical signals simultaneously, is proposed in this Letter. The design and optimization of its key structure, the vertical cavity surface emitting laser’s distributed Bragg reflec
  3. 所属分类:其它

    • 发布日期:2021-02-22
    • 文件大小:1048576
    • 提供者:weixin_38598745
  1. Self-oscillating optical frequency comb generator based on an optoelectronic oscillator employing cascaded modulators

  2. Self-oscillating optical frequency comb generator based on an optoelectronic oscillator employing cascaded modulators
  3. 所属分类:其它

    • 发布日期:2021-02-21
    • 文件大小:1048576
    • 提供者:weixin_38568548
  1. Recent advances in optoelectronic oscillators

  2. An optoelectronic oscillator (OEO) is a microwave photonic system that produces microwave signals with ultralow phase noise using a high-quality-factor optical energy storage element. This type of oscillator is desired in various practical applicatio
  3. 所属分类:其它

    • 发布日期:2021-02-21
    • 文件大小:7340032
    • 提供者:weixin_38557530
  1. Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting

  2. Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:340992
    • 提供者:weixin_38717169
  1. Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Lig

  2. Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:854016
    • 提供者:weixin_38637998
  1. Nonlinear Dynamics of 1550-nm VCSELs Subject to Positive Optoelectronic Feedback

  2. Nonlinear Dynamics of 1550-nm VCSELs Subject to Positive Optoelectronic Feedback
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:702464
    • 提供者:weixin_38700240
  1. A pair of integrated optoelectronic transceiving chips for optical interconnects

  2. In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chip
  3. 所属分类:其它

    • 发布日期:2021-02-13
    • 文件大小:838656
    • 提供者:weixin_38686542
  1. Simultaneous clock recovery and demultiplexing of a 320 Gb/s OTDM system using an optoelectronic oscillator based on cas

  2. An improved optoelectronic oscillator scheme for an optical time division multiplexing (OTDM) system based on cascaded Mach–Zehnder modulator (MZM) and polarization modulator (PolM) is experimentally investigated. The system can simultaneously realiz
  3. 所属分类:其它

    • 发布日期:2021-02-12
    • 文件大小:580608
    • 提供者:weixin_38664469
  1. Tunable optoelectronic oscillator incorporating an all-optical microwave photonic filter

  2. Tunable optoelectronic oscillator incorporating an all-optical microwave photonic filter
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:1048576
    • 提供者:weixin_38705640
  1. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

  2. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:1048576
    • 提供者:weixin_38717843
  1. Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices.

  2. Growth, patterning and alignment of organolead iodide perovskite nanowires for optoelectronic devices.
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:2097152
    • 提供者:weixin_38686658
  1. Effects of the substrate misorientation on the structural and optoelectronic characteristics of tensile GaInP quantum we

  2. Effects of the substrate misorientation on the structural and optoelectronic characteristics of tensile GaInP quantum well laser diode wafer
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:637952
    • 提供者:weixin_38631738
  1. Nonlinear dynamics of 1550-nm VCSELs subject to positive optoelectronic feedback

  2. Nonlinear dynamics of 1550-nm VCSELs subject to positive optoelectronic feedback
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:527360
    • 提供者:weixin_38668754
  1. Experimental observation of current-induced bistability in a semiconductor laser with positive optoelectronic feedback

  2. Experimental observation of current-induced bistability in a semiconductor laser with positive optoelectronic feedback
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:427008
    • 提供者:weixin_38694674
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