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  1. Polarization induced hole doping in graded AlxGa1-xN (x=0.7 similar to 1) layer grown by molecular beam epitaxy

  2. Polarization induced hole doping in graded AlxGa1-xN (x=0.7 similar to 1) layer grown by molecular beam epitaxy

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：836608
    • 提供者：weixin_38629130