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  1. Resistive switching properties and physical mechanism of cobalt ferrite thin films

  2. We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good e
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:1048576
    • 提供者:weixin_38751905