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  1. SEM observation and Raman analysis on 6H–SiC wafer damage irradiated by nanosecond pulsed Nd:YAG laser

  2. Silicon carbide (SiC) is a wide bandgap semiconductor which exhibits outstanding mechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an -indispensable powerful tool to induce struc
  3. 所属分类:其它

    • 发布日期:2021-02-04
    • 文件大小:565248
    • 提供者:weixin_38720390