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  1. Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane

  2. We demonstrate that ultra-thin porous alumina membrane (PAM) is suitable for controlling of both size and site of Ge nanodots on Si substrates. Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular bea
  3. 所属分类:其它

    • 发布日期:2021-02-08
    • 文件大小:590848
    • 提供者:weixin_38686658