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  1. Radio Frequency Transistors.pdf

  2. Radio Frequency Transistors.pdf

  3. 所属分类：讲义

    • 发布日期：2015-04-23
    • 文件大小：7340032
    • 提供者：hanweiwallywang

  1. p-n Junction Transistors -shockley

  2. 超经典的 shcokley的论文超经典的 shcokley的论文超经典的 shcokley的论文超经典的 shcokley的论文

  3. 所属分类：专业指导

    • 发布日期：2009-03-16
    • 文件大小：1048576
    • 提供者：qq_22569341

  1. {Interface} {Traps}对{Direct}的影响和{Alternating} {Current}在{Tunneling} {Field}-{Effect} {Transistors}中，{Interface} {Traps}的

  2. {Interface} {Traps}对{Direct}的影响和{Alternating} {Current}在{Tunneling} {Field}-{Effect} {Transistors}中，{Interface} {Traps}的{Impact}对{Direct}和{在{隧道} {字段}-{效果} {晶体管}中交替使用{当前}

  3. 所属分类：其它

    • 发布日期：2021-03-15
    • 文件大小：2097152
    • 提供者：weixin_38686557

  1. A Novel Extrinsic Parameter Extraction Method for the Technology Independent Modeling of Transistors

  2. A Novel Extrinsic Parameter Extraction Method for the Technology Independent Modeling of Transistors

  3. 所属分类：其它

    • 发布日期：2021-02-21
    • 文件大小：252928
    • 提供者：weixin_38631599

  1. Modulation of interface and bulk states in amorphous InGaZnO thin film transistors with double stacked channel layers

  2. Modulation of interface and bulk states in amorphous InGaZnO thin film transistors with double stacked channel layers

  3. 所属分类：其它

    • 发布日期：2021-02-21
    • 文件大小：595968
    • 提供者：weixin_38707192

  1. Improvements in passivation effect of amorphous InGaZnO thin film transistors

  2. Improvements in passivation effect of amorphous InGaZnO thin film transistors

  3. 所属分类：其它

    • 发布日期：2021-02-21
    • 文件大小：1048576
    • 提供者：weixin_38633475

  1. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

  2. We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas(2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi–Dirac distribution, we calculate the tran

  3. 所属分类：其它

    • 发布日期：2021-02-21
    • 文件大小：1048576
    • 提供者：weixin_38678172

  1. Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

  2. Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors

  3. 所属分类：其它

    • 发布日期：2021-02-21
    • 文件大小：929792
    • 提供者：weixin_38692836

  1. Contact-Length-Dependent Contact Resistance of Top-Gate Staggered Organic Thin-Film Transistors

  2. In this letter, a contact-length-dependent contact resistance model for top-gate staggered organic thin-film transistors (OTFTs) is proposed. The presented model can well describe the contact resistance increase as the distance by which the gate elec

  3. 所属分类：其它

    • 发布日期：2021-02-21
    • 文件大小：352256
    • 提供者：weixin_38621427

  1. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their perf

  2. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

  3. 所属分类：其它

    • 发布日期：2021-02-20
    • 文件大小：393216
    • 提供者：weixin_38604916

  1. Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage

  2. High-performance graphene field-effect transistors (G-FETs) are fabricated with carrier mobility of up to 5400 cm(2)/V . s and top-gate efficiency of up to 120 (relative to that of back gate with 285 nm SiO(2)) simultaneously through growing hi

  3. 所属分类：其它

    • 发布日期：2021-02-20
    • 文件大小：1048576
    • 提供者：weixin_38663837

  1. Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin Film Transistors

  2. Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin Film Transistors

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38568548

  1. Fabrication of SWCNT-Graphene Field-Effect Transistors

  2. Fabrication of SWCNT-Graphene Field-Effect Transistors

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：2097152
    • 提供者：weixin_38606639

  1. High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

  2. High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：524288
    • 提供者：weixin_38624975

  1. Low contact resistance in solid electrolyte-gated ZnO field-effect transistors with ferromagnetic contacts

  2. Low contact resistance in solid electrolyte-gated ZnO field-effect transistors with ferromagnetic contacts

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38517122

  1. AlGaN/GaN High Electron Mobility Transistors with Selective Area Grown p-GaN Gates

  2. AlGaN/GaN High Electron Mobility Transistors with Selective Area Grown p-GaN Gates

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：2097152
    • 提供者：weixin_38546024

  1. Radio-Frequency Performance of Epitaxial Graphene Field-Effct Transistors onSapphire Substrates

  2. Radio-Frequency Performance of Epitaxial Graphene Field-Effct Transistors onSapphire Substrates

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：754688
    • 提供者：weixin_38526780

  1. Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

  2. Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38670297

  1. Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Swi

  2. Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed I-V Measurement

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：1048576
    • 提供者：weixin_38610815

  1. A novel AlGaNGaN high electron mobility transistors with the partial fixed positive charge in buffer layer

  2. A novel AlGaNGaN high electron mobility transistors with the partial fixed positive charge in buffer layer

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：762880
    • 提供者：weixin_38712908
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