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  1. plasma etching 2

  2. Plasma processing. Advantages and disadvantages compared to wet etching. Lithography process. Overview of oxygen plasma etching. Qualitative descr iption of Debye shielding. Descr iption of glow discharge. Reactive ion etching versus plasma etching.
  3. 所属分类:专业指导

    • 发布日期:2009-05-05
    • 文件大小:570368
    • 提供者:catnba
  1. plasma etching 3

  2. Plasma processing. Advantages and disadvantages compared to wet etching. Lithography process. Overview of oxygen plasma etching. Qualitative descr iption of Debye shielding. Descr iption of glow discharge. Reactive ion etching versus plasma etching.
  3. 所属分类:专业指导

    • 发布日期:2009-05-05
    • 文件大小:3145728
    • 提供者:catnba
  1. plasma etching 4

  2. Plasma processing. Advantages and disadvantages compared to wet etching. Lithography process. Overview of oxygen plasma etching. Qualitative descr iption of Debye shielding. Descr iption of glow discharge. Reactive ion etching versus plasma etching.
  3. 所属分类:专业指导

    • 发布日期:2009-05-05
    • 文件大小:1048576
    • 提供者:catnba
  1. 电源技术中的半导体制蚀刻(Etching)

  2. (三)蚀刻(Etching) 蚀刻的机制,按发生顺序可概分为「反应物接近表面」、「表面氧化」、「表面反应」、「生成物离开表面」等过程。所以整个蚀刻,包含反应物接近、生成物离开的扩散效应,以及化学反应两部份。整个蚀刻的时间,等于是扩散与化学反应两部份所费时间的总和。二者之中孰者费时较长,整个蚀刻之快慢也卡在该者,故有所谓「reaction limited」与「diffusion limited」两类蚀刻之分。 1、湿蚀刻 最普遍、也是设备成本最低的蚀刻方法,其设
  3. 所属分类:其它

    • 发布日期:2020-12-09
    • 文件大小:72704
    • 提供者:weixin_38651983
  1. Diffractive self-imaging based on selective etching of a ferroelectric domain inversion grating

  2. A hexagonal array grating based on selective etching of a 2D ferroelectric domain inversion in a periodically poled MgO-doped LiNbO3 crystal is fabricated. The effects to the diffractive self-imaging as a function of diffraction distance for a fixed
  3. 所属分类:其它

    • 发布日期:2021-02-24
    • 文件大小:2097152
    • 提供者:weixin_38552305
  1. Linear variable filters fabricated by ion beam etching with triangle-shaped mask and normal film coating technique

  2. In this Letter, we propose a method of fabricating linear variable filters by ion beam etching with masking mechanisms. A triangle-shaped mask is designed and set between the ion source and sample. During the ion etching, the sample is moved back and
  3. 所属分类:其它

    • 发布日期:2021-02-23
    • 文件大小:522240
    • 提供者:weixin_38698863
  1. Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching

  2. A method for fabricating deep grating structures on a silicon carbide (SiC) surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change (LISC) are formed by femtosecond la
  3. 所属分类:其它

    • 发布日期:2021-02-23
    • 文件大小:314368
    • 提供者:weixin_38616359
  1. Fabrication of polyimide sacrificial layers with inclined sidewalls based on reactive ion etching

  2. Fabrication of polyimide sacrificial layers with inclined sidewalls based on reactive ion etching
  3. 所属分类:其它

    • 发布日期:2021-02-22
    • 文件大小:1048576
    • 提供者:weixin_38689223
  1. Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells

  2. Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells
  3. 所属分类:其它

    • 发布日期:2021-02-21
    • 文件大小:951296
    • 提供者:weixin_38741966
  1. Parallel fabrication of silicon concave microlens array by femtosecond laser irradiation and mixed acid etching

  2. A method of multi-beam femtosecond laser irradiation combined with modified HF-HNO3-CH3COOH etching is used for the parallel fabrication of all-silicon plano-concave microlens arrays (MLAs). The laser beam is split by a diffractive optical element an
  3. 所属分类:其它

    • 发布日期:2021-02-12
    • 文件大小:616448
    • 提供者:weixin_38685857
  1. Black Silicon nanostructures on silicon thin films prepared by reactive ion etching

  2. In this letter, the application of dry etching to prepare Black Silicon nanostructures on crystalline silicon thin films on glass is described. The utilized reactive ion etching with an inductively coupled plasma (ICP-RIE) of SF6 and O2 is discussed
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:516096
    • 提供者:weixin_38667849
  1. In-situ end-point detection during ion-beam etching of multilayer dielectric gratings

  2. An in-situ end-point detection technique for ion-beam etching is presented. A laser beam of the same wavelength and polarization as those in the intended application of the grating is fed into the vacuum chamber, and the beam retro-diffracted by the
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:201728
    • 提供者:weixin_38596267
  1. Comprehensive study of SF6/O2 plasma etching for mc-silicon solar cells

  2. Comprehensive study of SF6/O2 plasma etching for mc-silicon solar cells
  3. 所属分类:其它

    • 发布日期:2021-02-11
    • 文件大小:1048576
    • 提供者:weixin_38543749
  1. Area-selective deposition of self-assembled monolayers on a synchrotron radiation etching pattern

  2. Patterning of self-assembled monolayer (SAM) was demonstrated by area-selective deposition of SAMs on a pattern made by synchrotron radiation (SR) stimulated etching SiO2 thin films. The etching was conducted by exposing the SiO2 films to SR through
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:258048
    • 提供者:weixin_38637983
  1. Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching

  2. Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:1048576
    • 提供者:weixin_38577648
  1. Factors affecting the top stripping of GaAs microwire array fabricated by inductively coupled plasma etching

  2. Factors affecting the top stripping of GaAs microwire array fabricated by inductively coupled plasma etching
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:1048576
    • 提供者:weixin_38690545
  1. Growth, structure, chemical etching, and spectroscopic properties of a 2.9 mu m Tm,Ho:GdYTaO4 laser crystal

  2. Growth, structure, chemical etching, and spectroscopic properties of a 2.9 mu m Tm,Ho:GdYTaO4 laser crystal
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:1048576
    • 提供者:weixin_38595689
  1. High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique

  2. High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:1048576
    • 提供者:weixin_38700240
  1. SOI-based Arrayed Waveguide Grating Router with grating couplers fabricated in a single shallow etching step

  2. SOI-based Arrayed Waveguide Grating Router with grating couplers fabricated in a single shallow etching step
  3. 所属分类:其它

    • 发布日期:2021-02-10
    • 文件大小:726016
    • 提供者:weixin_38528939
  1. Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching [Inv

  2. We report the fabrication and characterization of silicon carbide microdisks on top of silicon pillars suited for applications from near- to mid-infrared. We probe 10 μm diameter disks with different under-etching depths, from 4 μm down to 1.4 μm, fa
  3. 所属分类:其它

    • 发布日期:2021-01-27
    • 文件大小:1048576
    • 提供者:weixin_38566318
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