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  1. Multiple scattering in solids.pdf

  2. A descr iption of general techniques for solving linear partial differential equations by dividing space into regions to which the equations are independently applied and then assembling a global solution from the partial ones. Intended for research

  3. 所属分类：专业指导

    • 发布日期：2010-03-19
    • 文件大小：1048576
    • 提供者：rgzeng

  1. FPGA-Based Secret Key Distillation Engine Quantum Key Distribution Systems

  2. An FPGA-Based 4 Mbps Secret Key Distillation Engine for Quantum Key Distribution Systems.pdf IDQ QKD 论文，可以参考。J Sign Process Syst(2017)86: 1-15 they contain on average less than one photon. The receiver of leaked information and the information leake

  3. 所属分类：网络安全

    • 发布日期：2019-07-16
    • 文件大小：2097152
    • 提供者：ahnushe

  1. Detection and characterization of intermolecular multiple-quantum coherence NMR signal of IS (I=1/2, S=3/2) spin systems

  2. 自旋1/2与自旋3/2体系分子间多量子相干信号的检测与表征，张文，陈松，液体核磁共振中分子间多量子相干(iMQC)具有不同于常规单量子相干的独特性质。本文将我们对iMQC的研究扩展到异核IS(I=1/2, S=3/2)体系。以�

  3. 所属分类：其它

    • 发布日期：2020-02-07
    • 文件大小：458752
    • 提供者：weixin_38685608

  1. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy

  2. MBE生长的I型GaAsSb/AlGaAs多量子阱结构及其局域态现象研究，葛啸天，王登魁，本文通过分子束外延技术生长了GaAs0.92Sb0.08/Al0.2Ga0.8As多量子阱结构，并对该样品进行了变温和变激发光致发光(PL)光谱测试。从测试结果�

  3. 所属分类：其它

    • 发布日期：2020-02-01
    • 文件大小：868352
    • 提供者：weixin_38502239

  1. 基础电子中的量子阱激光器

  2. 量子尺寸效应最实际的应用是量子阱（MQW）及用量子阱所得到的各种半导体器件，量子阱是窄带隙超薄层被夹在两个宽带隙势垒薄层之间。由一个势阱构成的量子阱结构为单量子阱，简称为SQW（Single Quantum Well）；由多个势阱构成的量子阱结构为多量子阱，简称为MQW（Multiple Quantum Well），如图所示。 　　图 量子阱激光器能带结构示意图 　　同常规的激光器相比，量子阱激光器具有以下特点： 　　（1）在量子阱中，态密度呈阶梯状分布，量子阱中首先是E1c和E1v之

  3. 所属分类：其它

    • 发布日期：2020-11-13
    • 文件大小：60416
    • 提供者：weixin_38653085

  1. Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

  2. We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities roote

  3. 所属分类：其它

    • 发布日期：2021-02-26
    • 文件大小：358400
    • 提供者：weixin_38705874

  1. Tensile-strained Ge/SiGe multiple quantum well microdisks

  2. An efficient monolithically integrated laser on Si remains the missing component to enable Si photonics. We discuss the design and fabrication of suspended and tensile-strained Ge/SiGe multiple quantum well microdisk resonators on Si for laser applic

  3. 所属分类：其它

    • 发布日期：2021-02-22
    • 文件大小：1048576
    • 提供者：weixin_38502916

  1. Full-color monolithic hybrid quantum dot nanoring micro light-emitting diodes with improved efficiency using atomic laye

  2. Full-color displays based on micro light-emitting diodes (μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring (NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through str

  3. 所属分类：其它

    • 发布日期：2021-02-22
    • 文件大小：847872
    • 提供者：weixin_38538950

  1. CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

  2. In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode (CL-TWE) Mach–Zehnder modulator (MZM) based on InP-based multiple quantum well (MQW) optical waveguides. The device configur

  3. 所属分类：其它

    • 发布日期：2021-02-22
    • 文件大小：716800
    • 提供者：weixin_38624628

  1. Metamorphic growth of 1.55 \mu m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

  2. We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 \mu m. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-p

  3. 所属分类：其它

    • 发布日期：2021-02-13
    • 文件大小：692224
    • 提供者：weixin_38662089

  1. Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE

  2. InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAs multiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy (MOVPE). The results of double crystal X-ray diffraction (DCXRD)

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：466944
    • 提供者：weixin_38705699

  1. Effect of dielectric cladding on active plasmonic device based on InGaAsP multiple quantum wells

  2. Effect of dielectric cladding on active plasmonic device based on InGaAsP multiple quantum wells

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：857088
    • 提供者：weixin_38525735

  1. InAs/InGaAs digital alloy strain-compensated quantum well lasers

  2. InAs/InGaAs digital alloy strain-compensated quantum well lasers have been grown on InP substrate by gas source molecular beam epitaxy. Multiple quantum wells composed of compressive InAs/In0.53Ga0.47As digital alloy triangular wells and tensile In0.

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：1048576
    • 提供者：weixin_38590989

  1. Two-Dimensional GaAs/AlGaAs Multiple Quantum Well Spatial Light Modulators

  2. Multiple quantum well spatial light modulators with 128×128 array in 38 μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication processes are described and compared.

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：825344
    • 提供者：weixin_38704830

  1. 1.82-\mu m distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H2O sensing system

  2. High-strained InGaAs/InGaAsP multiple quantum wells (MQWs) distributed feedback (DFB) lasers, fabricated using metal organic chemical vapor deposition, are presented at 1.82 \mu m with a high side-mode-suppression ratio of 49.53 dB. The current- and

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：823296
    • 提供者：weixin_38538224

  1. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-W

  2. Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：356352
    • 提供者：weixin_38672940

  1. White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

  2. Monolithic white-light-emitting diodes (white LEDs) without phosphors are demonstrated using InGaN/GaN multiple quantum wells (MQWs) grown on GaN microrings formed by selective area epitaxy on SiO2 mask patterns. The microring structure is composed o

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：502784
    • 提供者：weixin_38706455

  1. The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with mod

  2. The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：604160
    • 提供者：weixin_38731239

  1. Enhanced light emission from AlGaN/GaN multiple quantum wells using the localized surface plasmon effect by aluminum nan

  2. We investigate the localized surface plasmon (LSP) effect by Al nanorings on the AlGaN/GaN multiple quantum well (MQW) structure emitting at 365 nm. For this experiment, first, the size of Al nanorings is optimized to maximize the energy transfer (or

  3. 所属分类：其它

    • 发布日期：2021-02-04
    • 文件大小：1048576
    • 提供者：weixin_38686187

  1. Individually resolved luminescence from closely stacked GaN/AlN quantum wells

  2. Investigating closely stacked GaN/AlN multiple quantum wells (MQWs) by means of cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope, we have reached an ultimate spatial resolution of

  3. 所属分类：其它

    • 发布日期：2021-01-26
    • 文件大小：1048576
    • 提供者：weixin_38656662
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