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  1. Comparison of resistive and surface capacitive

  2. Compatison between Resistive touch panel and capacitive touch panel.

  3. 所属分类：制造

  1. Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

  2. Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low

  3. 所属分类：其它

    • 发布日期：2021-02-25
    • 文件大小：326656
    • 提供者：weixin_38727928

  1. Morphable Resistive Memory Optimization for Mobile Virtualization

  2. Morphable Resistive Memory Optimization for Mobile Virtualization

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38512781

  1. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

  2. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38717843

  1. Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

  2. Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38527987

  1. Improvement of resistive switching fluctuations by using one step lift-off process

  2. Improvement of resistive switching fluctuations by using one step lift-off process

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1048576
    • 提供者：weixin_38637665

  1. Low Current Resistive Switching Behavior in BiFeO3 Films with Ag Electrode

  2. Low Current Resistive Switching Behavior in BiFeO3 Films with Ag Electrode

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：764928
    • 提供者：weixin_38517122

  1. Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

  2. Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：1009664
    • 提供者：weixin_38631773

  1. Resistive Effect and Conduction Mechanism of BiFeO3 Thin Films

  2. Resistive Effect and Conduction Mechanism of BiFeO3 Thin Films

  3. 所属分类：其它

    • 发布日期：2021-02-11
    • 文件大小：380928
    • 提供者：weixin_38692184

  1. Temperature-dependent resistive switching behavior in the structure of Au/Nb:SrTiO3/Ti

  2. Au/Nb:SrTiO3/Ti structures were fabricated by depositing Au and Ti electrodes on a single crystal 0.5 wt% Nb:SrTiO3 (NSTO) using rf-magnetron sputtering technique. Resistive switching properties at different temperature were investigated. The Ti/NSTO

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：528384
    • 提供者：weixin_38607195

  1. Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the prope

  2. In this work, amorphous MgZnO/ZnO heterostructure films were deposited on Pt/TiO2/SiO2/Si at room temperature. By programming the proper compliance current, bipolar resistive switching performances of TiN/MgZnO/ZnO/Pt devices were stabilized; the dis

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：289792
    • 提供者：weixin_38630324

  1. Resistive switching properties and physical mechanism of cobalt ferrite thin films

  2. We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good e

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：1048576
    • 提供者：weixin_38751905

  1. Write-Once-Read-Many-Timesand Bipolar Resistive Switching Characteristics of TiN/HfO2/PtDevices Dependent on the Electro

  2. Write-Once-Read-Many-Timesand Bipolar Resistive Switching Characteristics of TiN/HfO2/PtDevices Dependent on the Electroforming Polarity

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：461824
    • 提供者：weixin_38666753

  1. Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemica

  2. We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：1048576
    • 提供者：weixin_38663197

  1. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechan

  2. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

  3. 所属分类：其它

    • 发布日期：2021-02-10
    • 文件大小：1048576
    • 提供者：weixin_38516956

  1. Correlated resistive/capacitive state variability in solid TiO2 based memory devices

  2. Correlated resistive/capacitive state variability in solid TiO2 based memory devices

  3. 所属分类：其它

    • 发布日期：2021-02-08
    • 文件大小：1048576
    • 提供者：weixin_38666753

  1. On the origin of enhanced resistive switching behaviors of Ti-doped HfO2 film with nitrogen annealing atmosphere

  2. On the origin of enhanced resistive switching behaviors of Ti-doped HfO2 film with nitrogen annealing atmosphere

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：1048576
    • 提供者：weixin_38649356

  1. Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

  2. Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：1048576
    • 提供者：weixin_38586118

  1. Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperat

  2. Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperatures

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：443392
    • 提供者：weixin_38727087

  1. A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

  2. A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

  3. 所属分类：其它

    • 发布日期：2021-02-07
    • 文件大小：1048576
    • 提供者：weixin_38666232
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