ESD Protection Techniques in Deep-Submicron CMOS Technology OUTLINE 1. Models of ESD Events. 2. ESD Specifications for IC Products. 3. Pin Combination in ESD Testing. 4. Design Concept of On-Chip ESD Protection. 5. Process Issues on ESD Robustness.
This paper presents a review of constraints, limitation factors and challenges to implement sub 1 V CMOS bandgap voltage reference (BVR) circuits in today’s and future submicron technology. Moreover, we provide insight analysis of BVR circuit archit
Abstruct- We discuss how the propagation of plasma waves in a High Electron Mobility Transistor (HEMT) can be used to implement a new generation of terahertz devices, including sources, resonant detectors, broad band detectors, and frequency multipl
The MPC555 / MPC556 is a member of Motorola’s MPC500 PowerPCTM RISC Microcontroller family. The MPC555 / MPC556 offers the following features: • PowerPC core with floating-point unit • 26 Kbytes fast RAM and 6 Kbytes TPU microcode RAM • 448 Kbytes f
集成电路工艺：Deep-submicron process technology
Describe such deep-submicron process technology and intended to provide semiconductor engineers and researchers with a comprehensive , state-of-the-art reference about these emerging and leading-edge process.C
Crosstalk Noise Control in Deep Submicron Physical Design Flow 王胤翔 周凤亭 陆生礼 摘 要：信号完整性的设计收敛已经成为当前深亚微米集成电路物理设计流程中的关键问题.对信号完整性收敛产生不利影响的有三个因素:串扰、直流电压降和电迁移.其中影响最大的是串扰,串扰噪声会产生大量的时序违规、逻辑错误.主要关注基于串扰控制的物理设计方法,包括新的流程、各个设计阶段对串扰的分析及修正的方法,以达到快速的时序收敛.并且根据真实的设计实
The wurtzite AlGaN/GaN Gunn diode with tristep-graded Al composition AlGaN as hot electron injector is simulated by using an improved negative differential mobility model of GaN. The results show that the oscillation mode of Gunn diode gradually shif
Second-harmonic generation (SHG) microscopy is a recently developed nonlinear optical imaging modality for imaging tissue structures with submicron resolution and is a potent tool for visualizing pathological effects of diseases. In this letter, we p
A novel direct writing technique using submicron-diameter fibers is presented. This technique adopts contact mode in the process of writing, and submicron lines with different widths have been obtained. Experimental results demonstrate that the resol
A novel web-like microstructure optical fiber (MOF) is fabricated which serves as a bundle of suspended submicron-thickness membranes as planar waveguides and their Y-type connection nodes as the secondary cores. The polarization dependent visible co
Tunneling is studied in two main single-photon avalanche diode (SPAD) topologies, which are n-tub guard ring (NTGR) and p-tub guard ring (PTGR). Device simulation, I-V measurements, and dark count calculations and measurements demonstrate that tunnel
Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of 1100–1400
