文件名称:
Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes
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上传时间: 2021-03-03
详细说明:Metal-semiconductor-metal photodetectors on semi-insulating GaAs with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012 cmHz1/2 W-1 at 5 V bias. Furthermore, the spectral response of this device possesses strong depen
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