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详细说明： M-TEST, an electrostatic pull-in approach for the in-situ mechanical property measure- ments of microelectromechanical systems (MEMS), is used to extract the Young’s modulus and residual stress in polysilicon surface micromachined devices. Its high sensitivity t o geometry is also used for process monitoring of device thickness and gap values. Canti- levers and fixed-fixed beams are designed, simulated, and tested for use with M-TEST. M-TEST models for estimating pull-in voltages are developed from two-dimensional finite-difference and energy-method electromechanical calculations and three-dimensional finite-element mechanical simulations. They include transition of Young’s modulus to plate modulus in thin and wide beams, stress-stiffening in fixed-fixed beams, compliant supports, and curling in cantilevers due to stress-gradients. ...展开收缩
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