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文件名称: germanium-p-channel-qwfet-cmos-paper.pdf
  所属分类: 专业指导
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  文件大小: 728kb
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  上传时间: 2019-10-13
  提 供 者: uhhh****
 详细说明：锗（旧译作鈤 ）是一种化学元素，它的化学符号是Ge，原子序数是32，原子量72.64。在化学元素周期表中位于第4周期、第IVA族。锗单质是一种灰白色准金属，有光泽，质硬，属于碳族，化学性质与同族的锡与硅相近，不溶于水、盐酸、稀苛性碱溶液，溶于王水、浓硝酸或硫酸，具有两性，故溶于熔融的碱、过氧化碱、碱金属硝酸盐或碳酸盐，在空气中较稳定，在自然界中，锗共有五种同位素：70，72，73，74，76，在700℃以上与氧作用生成GeO2，在1000℃以上与氢作用，细粉锗能在氯或溴中燃烧，锗是优良半导体，可作高频率电流的检波和交流电的整流用，此外，可用于红外光材料、精密仪器、催化剂。锗的化合物可用以制造荧2500 [5] MBE 1.3% S/D 2000 口[6] Strained A【7]GeQW Contact TiN Gate Contact Nitride LinerILD 1500 RTCVD.3% Strained Ge Qw Strained Undoped Ge QW Channel TiN Gate 1000 [This Work] 二二二=二二二二二 RSD 2% Strained Phos junction isolation 500 FInSb QW [3] RSD Strained Si [2] Si Ge- Buffer dop d OW 100nm Strain ed Ur 0E+002E+124E+126.E+128.E+12 Fig 5: Cross sectional tEM image of a fullv Si3Ge ,Bottom Barrier Hole Density(cm) processed ge qwfet device highlighting Fig 4: Hall mobility vs density for 300mm the strained Ge QW channel, tin gate RTCVD grown 1.3% strained Ge Qw electrode, self aligned implanted s/D, W/T Fig 6: Cross sectional TEM image highlighting the gate stack and source/drain of a ge to MBE grown Ge QW litcrature data(5-7I, layer that suppresses parallel conduction in QWFET incorporating a in-situ b doped Si and mobility gains over the Insb Qw[3 the sige buffer Ge. raised source/drain (rsd)which allows and strained silicon 2 for reduction/removal of the S/D implantation 800 2E+19 0.2 Germanium Hfo TiN Gate 700 0 1E+19 u -0.2 HfO -CO EDS 40· Ti EDS/2;a 500 t Ge EDS/2 g300 5E+18 -0.68 -O- Hf EDS sio2 Silicon Cap 20 -SI EDS .8 (a) Germanium 100 051015202505101520 02468101214 Depth Along Stack [nm] Fig8: High resolution cross sectional Relative Distance [nm Fig 7: Valence band diagram and hole TEM image of a high-k metal gate Fig 9: Energy dispersive X-ray spectroscopy wavefunction determined using k'"p Poisson stack with a thin Si cap on a ge depth profile of the high-k metal gate stack technique for Ge QWFET for(a)100A Si3 Ge, QWFET. Part of the Si cap is oxidized on Ge shown in Fig 7, indicating the presence top barrier and (b)10A Si Cap. In both cases, due to thermal dt during the transistor of both Si and sio2 between the ge and ns=5x1012 cm(Vcc=0.5V). The thin Si cap fabrication process. IIfo2. This confirms that part of the si cap is confines carriers in the Qw layer. oxidized due to thermal dt during the transistor process. Further quantification 3.0E06 Dit= 9.0x101 cm-2/ev was performed using electrical T HFO2 =20A measurements as shown in Figs. 9-11 2.5E-06 300 635°cDt 700°cDt 2.0E-06 250 A S02=6 Sio2=10A 9A 1.5E-06 F Silicon Cap c200 Thickness 1.0E-06 6A 50 Dit= 1.8x1011 cm-2/eV 150 9A No Silicon Cap 11A 50E-07 s100 14A G f=1 MHz 0.0E+005.0E+1210E+1315E+132.0E+13 0.0E+00 Hole density [cm 1 1.5:1.0-0.50.00.51.01.5 Vg m Figl1: Mobility ys carrier density for Ge 2 0 Ig 10 Full cv characteristics of Ge mosfet MOSFeT reference with different Si cap 81012141618202224 reference showing inversion toXe reduction thickness Mobility improves with TOXE [A] with Si cap thickness scaling. Since the Si cap reducing Si cap thickness due to reduction Fig 12: Ge mosFet carrier mobility at only contributes to inversion capacitance, the in carrier spill-out Mobility degrades 5x10 vs toXE for 635C Sio thickness(T sioz)on the silicon cap can be severely without Si cap due to high Dit. (circle)and 700C(triangle) process Dt. extracted from the accumulation capacitance In In both cases TOXE is scaled via Si cap this example, TSio: =6A for all cases due to thickness reduction Lower dt enables constant thermal process Dt. ToXE scaling down to 14,5A without nobility loss duction in 1 3.0E-06 Strained Ge QW 1200 Solid= Experiment Open Simulation 800 ▲←1.3% Strained 2.5E-06 TOXE= 14.5A 700 Undoped 1000 Ge QW 600 (THIS WORK R20E06 1.3% Strained Ge QW (Undoped) e500 L1.5E-06 Relaxed ge Ge MOSFET U 1.0E-06 F TOXE= 14.5A 4x c300 MOSFET 400 Relaxed Ge 20F1 MOSFET (1e18) Literature 200 100 Data to Date 10 kHZ to 1 MHZ Strained Silicon [2 8101214161820222426 0 0.0E+0050E+121.0E+131.5E+13 TOXE [A] Vg (V) Hole Density(cm) Fig15: Mobility vs TOXE at n,=5x10 Fig13: Capacitance vs gate voltage at f=1 Fig14: Mobility vs ns for the strained ge cm- for the ge mosfet reference and 0.3.0., and 0. 01 MHz for both the ge QWFET and relaxed Ge MOSFEt the ge Qwfet. The ge owfet MOSFET reference device and strained Ge reference, with TOXE= 145A.The achieves the highest mobility(770 QWFET using the same Si cap t high-k experimental data match 6-band k*p cm/V*s)at the thinnest TOXE (145A) process. Both devices exhibit minimal CV simulations assuming Dit and surface compared to the best relaxed 8 and dispersion at ToXE=145A. roughness matched to state-of-the-art si strained y ge literature data to date. 3500 At n,=5x10cm, the QwFEt exhibits 1.E03 1.3% Strained 3000 4x gain over state-of-the-art strained Si 2 ●鲁●● No Phos Undoped Ge QW 3000 1.E-04 Junction 之2500 (TOXE=14.5A) 1.3%Strained Undoped Ge QW 1:E05 §200 1500 ds=05 072 e1E06 1500 With Phos 1E-07 Functio 1000 600 1E08 500 vds=-0.05v T=295K to 20K 5x1012 1E-09 cm-2 -0.5-0.25 0 0.250.5 0.0E+0050E+121.0E+131.5E+13 Relaxed Ge g 073 Hole Density(cm) MOSFET (le18 Figl8: Drain current vs vg for a ge 150 Fig 16: Mobility vs hole carrier density 0.05V(open circle)and-05V(solid QWFET with Lgate=100nm, at Vds 200 300 in a strained Ge Qw Fet for Temperature [K] temperatures ranging(from bottom) circle). The device exhibits a healthy 295K,250K,200K,150K,100K,50K, Fig 17: Mobility vs T for the undoped ge subthreshold slope ( ss=97 mV/FC and 20K. The mobility improves 3x QWFET and for the relaxed doped Ge enabled by the phosphorus junction layer, MOSFET. The data from the QwFet when cooled to t=20 K which suppresses parallel conduction system indicates no saturation of mobility through the siGe buffer. 500 down to T=20 K, indicating minimal a MD, 2e15/1keV(NO RSD) 1.E04 450 ◆NoMD2e15/1
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