文件名称:
门极参数Rge Cge和Lg对IGBT开关波形的影响.pdf
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上传时间: 2019-09-14
详细说明：门极参数Rge Cge和Lg对IGBT开关波形的影响pdf,门极参数Rge Cge和Lg对IGBT开关波形的影响英文版。Gate voltage level
Infineon
100
■ Positive voltage
90
v=15V
80+|VGE=12V
VGE= sy
60
-VGE 3V
Effect to vcesat
50
40
Vge个,Vo
cesar
30
20
0
D.口
0,51,
52,02.53,
4
4,55.0
note: max. allowed vge is
VcE MVI
20V
sCtime and current 1200 VIGBT VcC=720 V
19V
V==17y
Effect to short cicuit
1二
15V
Vge个,Isc个(tsc√)
13V
V==11V
8101214161820
max. SC-time [us
Copyright o Infineon Technologies 2010. All rights reserved
Gate voltage level
Infineon
■ Negative voltage
To guarantee safety off
C
state, avoid parasitic
dicE
G
CG
dt
miller turn on
+15VO
Treiber
CG
RDriver irgon'ot rgint
n turn on delay increase
CGE
VcE t
(dead time)
dt
0V
ge=(RDriver RGonoft+Rgint )ice
E
Slightly reduce tf and
Eoff
Miller capability effect
increase driving power
Copyright o Infineon Technologies 2010. All rights reserved
Infineon
Driver driving capability
■ Driving capability
Peak current capability
o Maximum driver peak current
K is around 0.7
u= 30V 15V sWitching
n Power capability
● Driver power
Copyright o Infineon Technologies 2010. All rights reserved
Infineon
Effect of turn on/off
■Rgon
GE
正
GE
C
4
++1
十十+++++2+++
+日1444+1444++
+-+444++1+4+4
CE
CE
CE
Copyright o Infineon Technologies 2010. All rights reserved
Infineon
Effect of turn on/off
■ Goff
600
1200
10
100
1000
800
E
Ra3,9
60
0
600
33
R=47Q
R=4.7
1。=4/g
R=6.8
R=63g+400
R2=68
200
-0
15
d,思
0.75
1,75
275
3.25
0,75
12
175t[us25
2,75
3.25
Copyright o Infineon Technologies 2010. All rights reserved
Infineon
Effect of turn on/off
■Cge
Independently control of dv/at and dildt
GC
R
G
GE
Range Determined by Condition Influenced by Influence on
VGE< VGEth
const R
GI CGE
don
GEth
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