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AP8012H：VIPER12A升级版本，pin对pin替代 -AP8012H Datasheet 英文版Rev.A.1704.pdf
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详细说明：AP8012H：VIPER12A升级版本，pin对pin替代 -AP8012H Datasheet 英文版Rev.A.1704.pdf(T-25C, VDD-15 V; unless otherwise specified
Boss VDMOS Breakdown Voltage
ISw =250uA
750
820
Static Drain-Sourcc off current
550V
100
uA
≤ON
Static Drain-Source on Resistance
Isw=400mA,T,=25°C
18
Q
START
VCC Start Threshold voltage
13
14.5
16
STOP
VCC Stop Threshold Voltage
HYS
VCC Threshold I hysteresis
6.5
RST
VDD Reset voltage
5.5
6.5
Fosc Initial Accuracy
TA=25°C
40
45
50
kIz
FD
Frequency variation
5
Modulation frequency
167
DM
Iximum duty cycle
65
90
OMP
Feedback Shutdown Current
1.2
mA
COMP
COMP Pin Input Impedance
1.15
k
Peak Current limit
TA=25°C
044
0.55
0.6
A
T
LEB
Minimum Turn On Time
LEB time
350
tss
Soft-start timc
ms
ID BM
Peak drain current during burst mode
100
mA
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T
Thermal Shutdown Temperature
140
C
T
HYST
Thermal shutdown hysteresis
30
105V
Startup Charging Current (SW pin)
MMP-(
mA
DD
12V
AP8O12II(E)
16V
Operating supply current, switching
m
DD
COMP=OV
AP8012H(L)
VDD=16V
Operating supply current, switchin
0.6
mA
VCOMp=0V
Operating voltage range
After turn-on
35
viD over voltage
37
40
43
Opcrating supply current with Vdd<
OFF
VDD=6V
2VG
Nc
VDD
SW COMP
Pc817
GND
△
GND
CY
AP8012H
Figure l. Flyback application(basic)
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0
c00
800
750
50-250255075100125150
50-250255075100125150
Junction Temperture(C
Junction Temperture (C)
R
T
T
16.0
90
15.5
8.5
15.0-
14.0
7.5
13.5
13.0
-250255075100125150
-50-25025
75100125150
Junction Temperture(C
Junction T
(c)Ⅴ START VS T
(d)Ⅴ STOP VS T
41
≥40
50-250255075100125150
50-250255075100125150
Junction Temperture(
T
(f)Fosc vS T
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This device includes a high voltage start up current source connected on the sw of the device. As soon as a voltage
is applied on the input of the converter, this start up current source is activated and to charge the VDD capacitor as
long as Vdd is lower than VSTaRT. When reaching VSTART, the start up current source is cut off and VDD is sourced
by auxiliary side. As VDD falls below VSTOP, the hv-Start circuit wont work immediately until VDD is lower than
SW
VDD
UVLO
&TsD
Fig 2. Startup
In the process of start up, the current of drain increases to maximum limitation step by step As a result, it can
reduce the stress of secondary diode greatly and help to prevent the transformer turning into the saturation states
Typically the duration of soft-start is 10 ms
The internal power MosFET in AP8012H is driven by a dedicated gate driver for power switch control. Too weak
the gate driver strength results in higher conduction and switch loss of MoSFet while too strong gate drive results
in worse em
A good tradeoff is achieved through the built-in totem pole gate design with proper output strength and dead time
The good EMI system design and low idle loss is easier to achieve with this dedicated control scheme
The switching frequency of aP8012H is internally fixed at 45 kHz. No external frequency setting components are
required for PCB design.
The frequency modulation is implemented in AP8012H. So that, it minimizes the conduction band EMI and
therefore eases the system design because the tone energy could be spread out
a feedback pin controls the operation of the device. Unlike conventional PWM control circuits which use a voltage
input, the COMp pin is sensitive to current. Figure 3 presents the internal current mode structure. The power
MOSFeT delivers a sense current which is proportional to the main current R2 receives this current and the current
coming from the Comp pin. The voltage across R2(VR2) is then compared to a fixed reference voltage. The
MOSFET is switched off when VR2 equals the reference voltage
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SW
VDD
R
CA>PWM
R1
COMP
R2
GND
Fig 3. Feedback circuit
At the instant the internal Sense FET is turned on, there usually exists a high current spike through the Sense FET
caused by the primary side capacitance and secondary side rectifier diode reverse recovery. E xcessive voltage
across the sense resistor would lead to false feedback operation in the current mode pWM control. To counter this
effect, the device employs a leading edge blanking(LEB)circuit. This circuit inhibits the PWM comparator for a
short time(typically 350ns)after the Sense FeT is turned on
Once fault condition occurs, switching is terminated and the Sense fet remains off. This causes Vdd to fall. When
VDD reaches the VDD reset voltage, 6v, the protection is reset and the internal high voltage current source charges
the VDd capacitor. When VDd reaches the UVLO start voltage, 14.5V, the device resumes its normal operation. In
this manner, the auto-restart can alternately enable and disable the switching of the power Sense FET until the fault
condition is eliminated
The Sense Fet and the control ic are integrated in the same chip making it easier for the control ic to detect the
lemperature of the Sense FET. When the temperature exceeds approximately 170C, thermal shutdown is activated
che device turn off the Sense FET. The device will go back to work when the lower threshold temperature about
140° C is reached.
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3.60
4.00
c
0.23
0.27
Al
0.51
D
9.05
945
A2
3.00
3.40
El
6.15
6.5
A3
1.55
1.65
2. 54BSC
b
0.44
0.53
CA
7. 62BSC
bI
0.43
0.48
e B
7.62
9.30
BI
1.52BSC
0.00
0.84
0.24
0.32
300
TOP MARK
Package
AP8O12H
DIP-8
YWWXXXXX
Note:Y: Year Code: wW: Week Code: XXXXX. Internal Code
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A
1.35
1.55
1.75
L
0.45
.60
(.8
).10
0).15
LI
1. 04REF
A2
1.25
140
1.65
0.25B
A3
0.50
0.60
0.70
R
0.07
b
0.38
0.51
RI
0.07
b1
0.37
0.42
0.47
h
0.30
0.40
0.50
0.17
c
7
0.20
e1
4.80
490
500
13
E
5.80
6.00
6.20
03
El
3.80
3.90
4.00
13
15
1.270(BSC)
自3
L区
E目
INDEX
点sENA
SECTION E一
甘甘
075
TOP MARK
Package
AP8O12H
SOP-7
YWWXXXXX
Note: Y: Year Code, WW: Week Code: XXXXX: Internal Code
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Wuxi Chipown Microelectronics Co. Ltd. rcscrvcs the right to makc changes without furthcr notice to any
products or specifications herein Wuxi Chipown Microelectronics Co Ltd. does not assume any responsibility
for use of any its products for any particular purpose, nor does wuxi Chipown Microelectronics Co Ltd assume
any liability arising out of the application or use of any its products or circuits. Wuxi Chipown Microelectronics
Co. Ltd does not convey any license under its patent rights or other rights nor the rights of others
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