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TLP2768A_datasheet_en_20171226_20M.pdf
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详细说明：TLP2768A_datasheetTOSHIBA
TLP2768A
7. Principle of Operation
7.1. Truth table
Input
LED
Output
H
ON
L
L
FE
7. 2. Mechanical Parameters
Characteristics
Dimension
Unit
Package heigl
ht
2.3(ma×)
Creepage distances
8.0(min)
Clearance distances
8.0(min)
Internal isolation thickness
0.4(mn)
◎2015-2017
Toshiba Electronic Devices Storage Corporation
3
2017-12-26
Rev.9.0
TOSHIBA
TLP2768A
8. Absolute Maximum Ratings(Note)(Unless otherwise specified, Ta= 25C)
Characteristics
SymbolNote
Rating
Unit
LEd Input forward current
mA
Input forward current derating
(T。>110)A/T
-0.67
mA/C
Input forward current (pulsed
(Note
50
mA
Input forward current derating(pulsed)
(Ta≥110℃)
△lFP/△Ta
Input power dissipation
40
mw
Input power dissipation derating (Ta"C)APD/ATa
1.0
mW/°C
Input reverse voltage
5
V
Detector Output current
Output voltage
6
Supply voltage
6
Output power dissipation
60
m
Output power dissipation derating
(Ta≥110℃C)
△Po△Ta
Common Operating temperature
T
40to125
Storage temperature
Tst
-55to125
Lead soldering temperature
(10s)
T
260
Isolation voltage
(A
C,60s,R.H.≤60
BVs(Note 2)
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc )may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc )are within the absolute maximum
ratin
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions"/"Derating Concept and Methods")and individual reliability data (i.e. reliability test
report and estimated failure rate etc
Note 1: Pulse width(PW)s1 ms, duty =50
Note 2: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
9. Recommended Operating Conditions(Note)
Characteristics
Symbol
Note
n
yp
ax
Unit
Input on-state current
(Note 1)7.5
14
mA
Input off-state voltage
0.8
Supply voltage
Note 2) 2.7
3.3/5
5.5
Operating temperature
(Note 2)
125
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered
Note: A ceramic capacitor(0.1 uF)should be connected between pin 4 and pin 6 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin
Note 1: The rise and fall times of the input on-current should be less than 0.5 us
Note 2: Denotes the operating range, not the recommended operating condition
◎2015-2017
Toshiba Electronic Devices Storage Corporation
4
2017-12-26
Rev.9.0
TOSHIBA
TLP2768A
10. Electrical Characteristics(Note)
(Unless otherwise specified, Ta =-40 to 125C, Vcc= 2.7 to 5.5V)
Characteristics
Symbol
Test Condition
Circuit
Min Typ.MaxUnit
Input forward voltage
l==10mA,Ta=25℃C
1451.55
Input forward voltage temperature|△V=/△Ta
lF=10 mA
-2.0
mv/c
coefficient
Input reverse current
VR=5V,Ta=25℃
10
Input capacitance
Vs=0V, f=1 MHz, Ta=25C
20
pF
High-level output current
oH|Fg-13.11|yc=vo=5.5V,v=08V
50
VCC=Vo=5.5V, VF=0.8V
10
Low-level output voltage
VOL Fig 13.1.2 F=10 mA, lo=13 mA
0.6
High-level supply current
CcH Fig 13.1.3=0 mA
4
mA
LoW-level supply current
CCL
g1314|=10mA
Threshold input current(H/L)
FHL
lo =13 mA, Vo <0.6V
5.0
Note: All typical values are at Ta= 25C
11. Isolation Characteristics(Unless otherwise specified, Ta=25C)
Characteristics
Symbol Note
Test Condition
Min
Typ
Max
Unit
Total capacitance(input to output) Cs (Note 1)Vs=0V,(=1MHz
1.0
F
Isolation resistance
Rs( Note 1)Vs=500V,RH<60%
1×10121014
Q
Isolation valtage
BVs( Nate 1)AC, 60 s
5000
Vrms
c. sin oil
0000
DC. 60s in oil
10000
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together
12. Switching Characteristics(Note)
(Unless otherwise specified, Ta =-40 to 125C, Vcc =2.7 to 5.5v)
Characteristi
Symbol
Note
Test
Test Condition
Min
T
Max
Unit
Circuit
Propagation delay time
(Note 1)Fig 13.1.5F=7. 5 mA, CL=15 pF.
ns
RL=3509
Propagation delay time
LH
Pulse width distortion
It.HL-tpLHI
Propagation delay skew
(Note 1),
-40
(device to device)
(Note 2
Fall time
(Note 1)
Rise time
30
Common -mode transient
CMH
Fig 13.1.6 F=0 mA, Vcc=5V,
±20±25
kv/us
mmunity at output high
VcM=1000Vo-n. Ta=25C
Common-mode transient
CML
F=10 mA, Vcc=5V,
±20
immunity at output low
cM=1000 Vp-p, Ta=25C
Note: All typical values are at Ta=25C
Note 1: f= 5 MHz, duty =50 %, input current t=t=5 ns, CL is approximately 15 pF which includes probe and stray
iring capacitance
Note 2: The propagation delay skew, tps, is equal to the magnitude of the worst-case difference in tpHL and/or tpLH
that will be seen between units at the same given conditions(supply voltage, input current, temperature, etc)
◎2015-2017
Toshiba Electronic Devices Storage Corporation
5
2017-12-26
Rev.9.0
TOSHIBA
TLP2768A
13. Test Circuits and characteristics Curves
13. 1. Test Circuits
6
3
SHIELD
Fig. 13.1.1 lOH Test Circuit
Fig. 13.1.2 VOL Test Circuit
50.1uF
501uh
SHIELD
Fig. 13. 1.3 ICcH Test Circuit
Fig. 13.1.4 ICCL Test Circuit
lF=75 mA(PG)
(F= 5 MHz, duty=50%, tr=tf= less than 5 ns)
0.1uF
lF
50%
nput monitor
tpHL
O
taLH
5V
10%
CL: Includes probe and stray capacitance
P.G. Pulse generator
Fig. 13.1.5 Switching Time Test Circuit and Waveform
1000V
V
VcM
10%
V
SWB: IF-0 mA
CMH
HIELD
2.0V
CM
08
CM
SWA: IF=10 mA
800
CML
Fig 13.1.6 Common-Mode Transient Immunity and Waveform
◎2015-2017
Toshiba Electronic Devices Storage Corporation
6
2017-12-26
Rev.9.0
TOSHIBA
TLP2768A
13.2. Characteristics Curves(Note
20
C
553元2
5
curve sho
imit :o the input forward curren
Input forward voltage VE(V)
60
90
120
150
Ambient temperature Ta t c)
Fig. 13.2.1 IF -VF
Fig. 13.2.2 lF-Ta
C.6
06
Ie =10 mA
10 mA
C.5
d05
C3
lc =16 mA
l=128A
9Eo00S
ln= 16 mA
l。=128mA
lo=9.6 mA
IC
6.4 mA
lo=9.6 mA
0020406080130120140
00120140
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fg.1323VoL·Ta
Fig 13.2.4 VoL -Ta
3.5
3.0
RL=4<2
10
0051015202530
Input forward current IF (mA)
Input forward current IF(mA)
Fig. 13.2.5 Vo-lF
Fig 13.2.6 Vo-IF
◎2015-2017
Toshiba Electronic Devices Storage Corporation
2017-12-26
Rev.9.0
TOSHIBA
TLP2768A
cc=5V
Cc =3.3 V
R\
R1=1k
RL=1
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