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详细说明：这是个 宽带放大 器，简单易用，便宜。使用过了很久到，相当不错AMMC-5618 Typical Performance (Chuck=25 C, Vpp=5V,IDD=107 mA, Zo=50)
12
号至
活-30
471013161922
13161922
1316
FREQUENCY(GHz)
FREQUENCY(GHz)
FREQUENCY (GHz)
Figure 1. Gain
Figure 2. Isolation
Figure 3 Input Return Loss
20
12
0
10
1619
1013161922
FREQUENCY(GHz)
FREQUENCY(GHz)
FREQUENCY (GHz)
Figure 4. Output Return Loss
Figure 5. Noise Figure
Figure 6. Output Power at 1 dB Gain Compres-
sIon
AMMC-5618 Typical Performance vs Supply Voltage(Tb=25 C, Zo=50
Vdd=4v
15=
Vdd=5v
----Vdd=6
a-20
-30
----- Vdd=4v
Vdd
Vdd=4v
1013161922
1013161922
FREQUENCY(GHz)
FREQUENCY(GHz)
FREQUENCY(GHz)
Figure 7. Gain and Voltage
Figure 8. Isolation and voltage
Figure 9. Input Return Loss and voltage
AMMC- 5618 Typical Performance vs Supply Voltage(cont )(Tb=25 C, Z0=50)
25
Vdd=4
Vdd=5v
20
巴
15
Vdd=4t
Vdd=6v
13161922
FREQUENCY(GHz)
FREQUENCY(GHz)
Figure 10. Output Return Loss and voltage Figure 11. Output Power and voltage
AMMC-5618 Typical Performance vs Temperature(VDD=5V, 20=50)
25
25c
B5 C
-20
10
兽兽
dd=4v
Vdd=5v
Vdd=6v
eP
40
25C
71013161922
7101316192
101316
FREQUENCY(GHz)
FREQUENCY (GHz)
FREQUENCY (GHz
Figure 12. Gain and Temperature
Figure 13. Isolation and Temperature
Figure 14 Input Return Loss and Temperature
40C
25C
20
---85c
巴
15
10
-40C
25c
25c
--85C
85C
0
471013161922
1013161922
7101316
FREQUENCY (GHz)
FREQUENCY(GHz)
FREQUENCY (GHz)
Figure 15. Output Return Loss and Temperature Figure 16. Noise Figure and Temperature
igure 17. Output Power and Temperature
AMMC-5618 Typical Scattering Parameters(Tb=25 C, Vpp=5V, IDD=107 mA)
s11
S21
s12
s22
Freq ghz
dB
Mag Phase
dB
Mag Phase
dB
Mag Phase dB Mag Phase
200240.7612552.007480.001340.40.9577
2.50
2.9
-147
35.4
97400
57
09
0.91
97
3.00
-3.20.6916619.00.111026910
-1.6
0.84
-118
350
-3.60.66
174
0.43
59.1
0.75
138
4004.00.631520.8
1.09
147
57.7
380.64156
450
-490.5712677
178
518
13
53
0.55
173
50
-73
043
94
12.5
4.2
138
488
-142
-69
0.45
172
5501270.236714.7541944570.01-1708.60.37160
6.00
19.8
15.1
445
161
10.1
0.31
151
50
236
851515.69344460.0114211.30.27141
700
24.7
150
1344.30.01127-12.60.
130
750
2640.05
150
5.61
4400.01
115
-13.9
120
800
28.20.0428149559224390.011031530.17109
8.50
2630.05
23
14.9
5.57
37
436
16.7
0.15
900
22.8
55
14.9
4330.01
86
-18.2
0.12
9501990.174148552654320.01771970.174
100017701388148549
70
21.40.09
10.50
16.1
0.16
5.45904290016322.80.07
1100148018-11014.754310142800157-24.30623
11.50
-13.9
0.2
120
14.7
5.41
-113
425
25.1
0.06
12.0
13.2
0.22
128
14.6
53812442500145-2510.0622
12.50
-126
136
14.6
5.37
-134
423
0.01
24.50.06
44
13.
12.2
14314.6
5.37
42
0.01
23.30.07
60
13501190.26-1511465.3815541900131-2220.08
14.00
11.60.26
-159
14.7
54
41.70.01
24
-213
0.09
14.50
11.5
0.27
166
14.7
5.42
176
41.6
0.01
0.09
15.00
-11.4
0.27
174
14.7
5.46
174
-414
19.8
0.1
-105
15.50
11.4
0.27
177
14.8
549
163
413
0.01
19.1
0.11
113
16.
-115
0.27
168
14.9
5.54
153
41.1
-18.40.12
16:50-11702615714.95581424080010-177013-1286
17.00
11.90.25
150
131
4080.01
-17.2
0.14
17.50
12.2025
132
15.1
5661204080.01
-12
16.70.15138
1800-12.40241161515.71109405
-16
16.2
0.16
143
18.50
12.4
0.24
98
152
5.75
404001
23
158
0.16
-148
19
12.2
0.25
152
5.75
403
0.01
29
154
0.17
154
19
11.5
0.27
15.25.73
40.
35
14.9
0.18
158
10.5
03
150
3990
42
14.6
0.19
2050
9.2
0.35
14
14.8
5.51
46
399
.01
48
14.0
02
21.00
0.4
14.5
400
55
13.8
172
21.50
-6.7
046
14.1
5.05
19
398
0.01
63
135
0.21
176
2200
-5.7
0.52
36
13.5
4.72
403
72
-13.1
0.22
179
Note:
1. Data obtained from on-wafer measurements
Biasing and operation
Assembly Techniques
The aMMc-5618 is normally
The backside of the AMMc-5618 76 8mS. a guided wedge at an
biased with a single positive
chip is rf ground. For
ultrasonic power level of 64 dB
drain supply connected to both microstripline applications, the
can be used for the 0.7 mil wir
VDI and Vp2 bond pads as
chip should be attached directly The recommended wire bond
shown in Figure 19(a). The
to the ground plane (e. g, circuit stage temperature is 150 2 C
recommended supply voltage
carrier or heatsink)using
8 to 5 v
electrically conductive epoxvlll
Caution should be taken to not
exceed the absolute maximum
No ground wires are required
For best performance, the
Rating for assembly temperature
because all ground connections topside of the MMIC should be and time
are made with plated through- brought up to the same height
holes to the backside of the
as the circuit surrounding it
The chip is 100 m thick and
device
This can be accomplished by
should be handled with care. This
mounting a gold plated metal
MMIC has exposed air bridges on
Gate bias pads (VGl& VG2)are
shim (same length and width as the top surface and should be
also provided to allow
the Mmic)
under
the chip
handled by the edges or with a
adjustments in gain, RF output which is of the correct
custom collet (do not pick up die
power, and dc power
thickness to make the chip and
with vacuum on die center.)
dissipation, if necessary. Ne
adjacent circuit coplanar.
connection to the gate pad is
This mmic is also static
needed for single drain-bias
The amount of epoxy used for
sensitive and esd handling
operation. However, for custom chip and or shim attachment
precautions should be taken
applications, the Dc current
should be just enough to
Notes
flowing through the input and/ provide a thin fillet around the
1. Ablebond 84-1 LM1 silver epoxy is
or output gain stage may be
bottom perimeter of the chip or
recommended
adjusted by applying a voltage shim. The ground plane should
2. Buckbee-Mears Corporation, St Paul, MN
to the gate bias pad(s) as shown be free of any residue that may
8002623824
in Figure 19(b). A negative gate- jeopardize electrical or
pad voltage will decrease the
mechanical attachment
drain current. The gate-pad
voltage is approximately zero
The location of the rf bond
volt during operation with no pads is shown in Figure 20
DC gate supply. Refer to the
Note that all the rf input and
Absolute Maximum Ratings
output ports are in a ground-
table for allowed Dc and
Signal-Ground configuration
thermal conditions
rf connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single bond
connections. however double
bonding with 0.7 mil gold wire
or the use of gold mesh(2I is
recommended for best
performance, especially near the
high end of the frequency range
Thermosonic wedge bonding is
the preferred method for wire
ttachment to the bond pad
Gold mesh can be attached using
a 2 mil round tracking tool and a
tool force of approximately 22
grams with an ultrasonic power
of roughly 55 dB for a duration of
Feedback
Network
Matchine
Matching
RF Output
Matchine
RF Input
v
Fiqure 1B. AMMC-5618 Schematic
To power supply
To power supply
100 pF chip capacitor
100 pF chip capacitor
gold plated shim
gold plated shim
RF Input
RF Output
RF Input
RF Output
Bonding island
or sma
p-capaci
To VGt power supply
To VG2 power supply
(b)
Figure 19. AMMC-5618 Assembly Diagram
0143355573
Vd1
GND Vd2
920
530
RE
Vg1
Va2
079
593
Figure 20. AMMC-5618 Bond pad locations(dimensions in microns)
Ordering Information
AMMC-5618-W10=waffle pack, 10 devices per tray
AMMC-5618-W50= waffle pack, 50 devices per tray
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site
Data subject to change
Copyright 2003 Agilent Technologies, Inc
February 12, 2004
5989-0532EN
∷ Agilent Technologies
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