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文件大小: 7mb
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上传时间: 2020-05-26
详细说明：The device is a 2,112Mbit memory organized as 64K rows (pages) by 2,112x8 columns. Spare 64x8 columns are located from column
address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodating data transfer between the I/O
buffers and memory during page read and page program operations. The program and read operations are executed on a page basis,
while the erase operation is executed on a block basis. The memory array consists of 2048 separately erasable 128K-byte blocks. It in-
dicates that the bit-by-bit erase operation is prohibited on the device.
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