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  1. Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

  2. Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers incl
  3. 所属分类:其它

    • 发布日期:2021-02-20
    • 文件大小:769024
    • 提供者:weixin_38648037