门极参数Rge Cge和Lg对IGBT开关波形的影响pdf,门极参数Rge Cge和Lg对IGBT开关波形的影响英文版。Gate voltage level
Infineon
100
■ Positive voltage
90
v=15V
80+|VGE=12V
VGE= sy
60
-VGE 3V
Effect to vcesat
50
40
Vge个,Vo
cesar
30
20
0
D.口
0,51,
52,02.53,
4
4,55.0
note: max. allowed vge is